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BCP53

ON Semiconductor
Part Number BCP53
Manufacturer ON Semiconductor
Description PNP Silicon Epitaxial Transistors
Published Jul 29, 2015
Detailed Description BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio ampli...
Datasheet PDF File BCP53 PDF File

BCP53
BCP53

Overview
BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications.
The device is housed in the SOT−223 package which is designed for medium power surface mount applications.
• High Current • NPN Complement is BCP56 • The SOT−223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Device Marking: BCP53T1G = AH BCP53−10T1G = AH−10 BCP53−16T1G = AH−16 • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C VCEO VCBO VEBO IC PD −80 −100 −5.
0 1.
5 1.
5 12 Vdc Vdc Vdc Adc W mW/°C Operating and Storage Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Device mounted on a glass epoxy printed circuit board 1.
575 in.
x 1.
575 in.
x 0.
059 in.
; mounting pad for the collector lead min.
0.
93 sq.
in.
THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient (Surface Mounted) Lead Temperature for Soldering, 0.
0625″ from case Time in Solder Bath Symbol RqJA TL Max 83.
3 260 10 Unit °C/W °C s © Semiconductor Components Industries, LLC, 2014 October, 2014 − Rev.
11 1 http://onsemi.
com MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS COLLECTOR 2, 4 1 BASE EMITTER 3 4 12 3 SOT−223 CASE 318E STYLE 1 MARKING DIAGRAM AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Spe...


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