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IRF7809

International Rectifier
Part Number IRF7809
Manufacturer International Rectifier
Description HEXFET
Published Nov 12, 2015
Detailed Description PD - 93812 PD - 93813 IIRRFF77880099//IIRRFF77881111 Provisional Datasheet • N-Channel Application-Specific MOSFETs HEX...
Datasheet PDF File IRF7809 PDF File

IRF7809
IRF7809

Overview
PD - 93812 PD - 93813 IIRRFF77880099//IIRRFF77881111 Provisional Datasheet • N-Channel Application-Specific MOSFETs HEXFET® Chipset for DC-DC Converters • Ideal for CPU Core DC-DC Converters • New CopperStrapTM Interconnect for Lower Electrical and Thermal Resistance • Low Conduction Losses S1 AA 8D • Low Switching Losses S2 7D • Minimizes Parallel MOSFETs for high current applications S3 6D G4 5D Description These new devices employ advanced HEXFET® Power SO-8 Top View MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.
The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of mobile microprocessors.
DEVICE RATINGS The IRF7809/IRF7811 employs a newCopperStrapTM interconnect technology pioneered by International VDS IRF7809 30V IRF7811 28V Rectifier to dramatically improve the electrial & thermal resistance contribution of the package.
The new CopperStrap SO-8 power MOSFETs are capable of current ratings over 17A and power dissipation of 3.
5W @ 25°C ambient conditions, thereby reducing the need for paralleled devices, improving efficiency and RDS(on) QG Qsw Q oss 7.
5 mΩ 77.
5 nC 23.
9 nC 30 nC 11 mΩ 23 nC 7 nC 31 nC reliability and reducing board space.
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.
5V) Pulsed Drain Current T = 25°C A TL = 90°C Power Dissipation T = 25°C A TL = 90°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambientƒ Maximum Junction-to-Lead www.
irf.
com Symbol VDS VGS I D IDM P D TJ, TSTG I S ISM RθJA RθJL IRF7809 IRF7811 30 28 ±12 17.
6 14 16.
3 13 100 100 3.
5 3.
0 –55 to 150 2.
5 2.
5 50 50 Max.
35 20 Units V A W °C A Units °C/W °C/W 1 1/19/00 IRF7809/IRF7811 Electrical Characteristics Parameter IRF7809 ...


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