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WPM2014

WillSEMI
Part Number WPM2014
Manufacturer WillSEMI
Description Single P-Channel Power MOSFET
Published Jan 9, 2016
Detailed Description WPM2014 WPM2014 Single P-Channel, -20V, -4.9A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) -20 Rds(on) (Ω) 0.05...
Datasheet PDF File WPM2014 PDF File

WPM2014
WPM2014

Overview
WPM2014 WPM2014 Single P-Channel, -20V, -4.
9A, Power MOSFET Http//:www.
sh-willsemi.
com VDS (V) -20 Rds(on) (Ω) 0.
050 @ VGS=–4.
5V 0.
063 @ VGS=–2.
5V 0.
074 @ VGS=–1.
8V Descriptions The WPM2014 is P-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WPM2014 is Pb-free.
Features DFN2x2-6L D DS 6 54 D S 1 23 D DG Pin configuration (Top view) 6 54  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package DFN2x2-6L Applications  Driver for Relay, Solenoid, Motor, LED etc.
 DC-DC converter circuit  Power Switch  Load Switch  Charging WLSI SYWW 1 23 WLSI = Company code S = Device code Y = Year (Last digit) WW = Week Marking Order information Device Package Shipping WPM2014-6/TR DFN2x2-6L 3000/Reel&Tape Will Semiconductor Ltd.
1 Oct, 2013-Rev.
1.
3 WPM2014 ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C, unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Maximum Power Dissipation a Continuous Drain Current (TJ = 150 °C)b Maximum Power Dissipation b Pulsed Drain Current c Operating Junction Temperature Storage Temperature Range TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID PD ID PD IDM TJ Tstg 10 S Steady State -20 ±8 -4.
9 -4.
1 -3.
9 -3.
2 2.
0 1.
4 1.
3 0.
9 -3.
5 -2.
9 -2.
8 -2.
3 1.
0 0.
7 0.
6 0.
4 -20 150 -55 to 150 Unit V A W A W A °C °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Thermal Resistance a t ≤ 10 s Steady State Junction-to-Ambient Thermal Resistance b t ≤ 10 s Steady State Junction-to-Case Thermal Resistance Steady State Symbol RθJA RθJA RθJC Typical 45 62 80 120 32 Maximum 60 85 115 170 40 Unit °C/W a Surface mounted on FR4 Board using 1 in sq pad ...


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