DatasheetsPDF.com

3SK263

Part Number	3SK263
Manufacturer	ON Semiconductor
Description	N-Channnel Dual Gate MOSFET
Published	Feb 7, 2016
Detailed Description	Ordering number : EN4423D 3SK263 N-Channnel Dual Gate MOSFET 15V,30mA,PG=21dB,NF=1.1dB, CP4 http://onsemi.com Features...
Datasheet	3SK263 PDF File

Overview

Ordering number : EN4423D 3SK263 N-Channnel Dual Gate MOSFET 15V,30mA,PG=21dB,NF=1.
1dB, CP4 http://onsemi.
com Features • Enhancement type • Small noise figure • Small cross modulation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate1-to-Source Voltage Gate2-to-Source Voltage Drain Current Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDS VG1S VG2S ID PD Tch Tstg Conditions Ratings 15 ±8 ±8 30 200 125 --55 to +125 Unit V V V mA mW °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage...

Similar Datasheet

3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD - NEC
3SK207 Silicon N Channel Dual Gate MOS Type FET - Toshiba Semiconductor
3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD - NEC
3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD - NEC
3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD - NEC
3SK225 Silicon N Channel Dual Gate MOS Type FET - Toshiba Semiconductor
3SK226 Silicon N Channel Dual Gate MOS Type FET - Toshiba Semiconductor
3SK227 Silicon N-Channel 4-pin MOSFET - Panasonic
3SK228 Silicon NPN Triple Diffused - Hitachi Semiconductor
3SK231 MOSFET - NEC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)