Complementary Transistors. NTE2520 Datasheet

NTE2520 Transistors. Datasheet pdf. Equivalent

Part NTE2520
Description Silicon Complementary Transistors
Feature NTE2519 (NPN) & NTE2520 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D Hig.
Manufacture NTE
Datasheet
Download NTE2520 Datasheet

NTE2519 (NPN) & NTE2520 (PNP) Silicon Complementary Transist NTE2520 Datasheet
Recommendation Recommendation Datasheet NTE2520 Datasheet





NTE2520
NTE2519 (NPN) & NTE2520 (PNP)
Silicon Complementary Transistors
High Voltage Driver
Features:
D High Breakdown Voltage
D Large Current Capacity
D Isolated Package
Applications:
D Color TV Audio Output
D Converters
D Inverters
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
ICBO
IEBO
hFE
fT
VCB = 120V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 100mA
VCE = 5V, IC = 10mA
VCE = 10V, IC = 50mA
Min Typ Max Unit
– – 1.0 µA
– – 1.0 µA
140 – 400
90 – –
– 120 – MHz



NTE2520
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
NTE2519
NTE2520
Cob VCB = 10V, f = 1MHz
14 pF
22 pF
Collector to Emitter Saturation Voltage
NTE2519
NTE2520
VCE(sat) IC = 500mA, IB = 50mA
0.13 0.45 V
0.2 0.5 V
Base to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Rise Time
Storage Time
NTE2519
NTE2520
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC = 500mA, IB = 50mA
IC = 10µA, IE = 0
IC = 1mA, RBE =
IE = 10µA, IC = 0
IC = 10A, IB1 = 10A,
IB2 = 700mA, Note 1
0.85 1.2
180 – –
160 – –
6––
0.04
V
V
V
V
µs
1.2 µs
0.7 µs
Fall Time
NTE2519
NTE2520
tf
0.08
0.04
µs
µs
Note 1. Pulse Width = 20µs, Duty Cycle 1%.
.315 (8.0)
.130
(3.3)
.118 (3.0)
Dia
.295
(7.5)
EC B
.433
(11.0)
.610
(15.5)
.094 (2.4)





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