Power Transistor. BUZ104L Datasheet

BUZ104L Transistor. Datasheet pdf. Equivalent


Part BUZ104L
Description Power Transistor
Feature BUZ 104L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level •.
Manufacture Siemens Semiconductor Group
Datasheet
Download BUZ104L Datasheet


BUZ 104L SIPMOS ® Power Transistor • N channel • Enhancemen BUZ104L Datasheet
Recommendation Recommendation Datasheet BUZ104L Datasheet




BUZ104L
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
• dv/dt rated
• Low on-resistance
• 175 °C operating temperature
• also in TO-220 SMD available
BUZ 104L
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 104L
VDS
50 V
ID
17.5 A
RDS(on)
0.1
Package
TO-220 AB
Ordering Code
C67078-S1358-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 29 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 17.5 A, VDD = 25 V, RGS = 25
L = 114 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 17.5 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Vgs
Ptot
Values
17.5
70
35
6
± 14
± 20
60
Unit
A
mJ
kV/µs
V
W
Semiconductor Group
1
07/96



BUZ104L
BUZ 104L
Maximum Ratings
Parameter
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Tj
Tstg
RthJC
RthJA
Values
-55 ... + 175
-55 ... + 175
2.5
75
E
55 / 175 / 56
Unit
°C
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Unit
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = -40 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 5 V, ID = 8.5 A
V(BR)DSS
50
VGS(th)
1.2
IDSS
-
-
-
IGSS
-
RDS(on)
-
--
1.6 2
0.1 1
1 100
10 100
10 100
0.085 0.1
V
µA
nA
µA
nA
Semiconductor Group
2
07/96







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