N-Channel MOSFET. ME60N03S Datasheet

ME60N03S MOSFET. Datasheet pdf. Equivalent

Part ME60N03S
Description N-Channel MOSFET
Feature ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A ≦ 10mΩ R.
Manufacture Matsuki
Datasheet
Download ME60N03S Datasheet

ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFET V ME60N03S Datasheet
ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFET V ME60N03S-G Datasheet
Recommendation Recommendation Datasheet ME60N03S Datasheet




ME60N03S
ME60N03S/ME60N03S-G
30V N-Channel Enhancement Mode MOSFET
VDS=30V
RDS(ON), Vgs@10V,Ids@30A 10mΩ
RDS(ON), Vgs@4.5V,Ids@15A 18.5mΩ
FEATURES
Advanced trench process technology
High density cell design for ultra low on-resistance
Specially designed for High-side switching of PWM
application.
PIN CONFIGURATION (TO-252)
Top View
APPLICATIONS
Motherboard (V-Core)
Portable Equipment
DC/DC Converter
Load Switch
LCD Display inverter
IPC
e Ordering Information: ME60N03S (Pb-free)
ME60N03S-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
TC=25
Continuous Drain Current*
TC=70
TA=25
TA=70
Pulsed Drain Current
TC=25
Maximum Power Dissipation*
TC=70
TA=25
TA=70
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
RθJC
Maximum Ratings
30
Unit
V
±20 V
50
40
A
14
11
100 A
40
25
W
3.1
2
-55 to 150
T≦10 sec
Steady State
15
40
℃/W
3.1 ℃/W
DCC
正式發行
Mar, 2012 – Version 2.1
01



ME60N03S
ME60N03S/ME60N03S-G
30V N-Channel Enhancement Mode MOSFET
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max
STATIC
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VGS=10V, ID=30A
VGS=4.5V, ID=15A
30
13
±100
1
8.3 10
14 18.5
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
VDS=15V, VGS=10V, ID=25A
22
11
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=15V, VGS=4.5V, ID=25A
5.4
5.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V, VGS=0V,
f=1MHz
830
150
43
Rg
td(on)
tr
td(off)
tf
Gate Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS=0V, VGS=0V, f=1MHz
RL=15Ω, VGEN =10V, ID=1A
VDD=15V, RG=3Ω
1
13.5
13
42
4
SOURCE-DRAIN DIODE
IS Max.Diode Forward Current
VSD Diode Forward Voltage
Note:a. Pulse test: pulse width=300us, duty cycle=2
IS=20A, VGS=0V
0.87
20
1.5
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Unit
V
V
nA
μA
mΩ
nC
pF
Ω
ns
A
V
Mar, 2012 – Version 2.1
DCC
正式發行
02





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