Power Transistor. 2SD2167 Datasheet

2SD2167 Transistor. Datasheet pdf. Equivalent


Part 2SD2167
Description Power Transistor
Feature Transistors Power Transistor (31±4V, 2A) 2SD2167 2SD2167 zFeatures 1) Built-in zener diode between.
Manufacture ROHM
Datasheet
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Transistors Power Transistor (31±4V, 2A) 2SD2167 2SD2167 z 2SD2167 Datasheet
Recommendation Recommendation Datasheet 2SD2167 Datasheet




2SD2167
Transistors
Power Transistor (31±4V, 2A)
2SD2167
2SD2167
zFeatures
1) Built-in zener diode between collector and base.
2) Zener diode has low voltage dispersion.
3) Strong protection against reverse power surges due
to low loads.
4) PC=2 W (on 40×40×0.7mm ceramic board)
zExternal dimensions (Unit : mm)
ROHM : MPT3
EIAJ : SC-62
4.0
1.0 2.5 0.5
(1)
(2)
(3)
(1) Base
(2) Collector
(3) Emitter
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
VCBO
VCEO
31±4
31±4
Emitter-base voltage
Collector current
VEBO
IC
5
2
3
Collector power dissipation
PC
0.5
2
Junction temperature
Tj 150
Storage temperature
Tstg
55 to +150
1 Pw=20ms , duty=1 / 2
2 When mounted on a 40 × 40 × 0.7 mm ceramic board.
Unit
V
V
V
A(DC)
A(Pulse) 1
W
W 2
°C
°C
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
Denotes hFE
2SD2167
MPT3
NPQ
DL
T100
1000
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
hFE
fT
Cob
Min.
27
27
5
56
Typ.
0.25
100
25
Max.
35
35
1
1
1
0.5
270
Unit
V
V
V
µA
µA
V
V
MHz
pF
Conditions
IC = 50µA
IC = 1mA
IE = 50µA
VCB = 20V
VEB = 5V
IC/IB = 2A/0.2A
IC/IB = 1A/50mA
VCE/IC = 3V/0.5A
VCE = 3V , IE = −0.5A , f= 30MHz
VCB = 10V , IE = 0A , f = 1MHz
Rev.A
1/2



2SD2167
Transistors
2SD2167
zElectrical characteristics
20
1.6
50mA
445330m50mmAmAAA Ta=25°C
252m0AmA
15mA
1.2 10mA
5mA
0.8
0.4
IB=0
0
0 1 234 5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output characteristics
5
Ta=25°C
2 VCE=3V
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
500 Ta=25°C
200 VCE=5V
100 3V
50
20
10
5
0.001 0.005 0.01 0.05 0.1 0.2 0.5 1 2
COLLECTOR CURRENT : IC (A)
5
Fig.2 Ground emitter propagation Fig.3 DC current gain vs. collector current
characteristics
2
Ta=25°C
1
0.5
0.2
0.1 IC/IB=20
IC/IB=10
0.05
0.02
0.01
0.001 0.005 0.01 0.05 0.1 0.2 0.5 1 2
COLLECTOR CURRENT : IC (A)
5
500
VCE=3V
Ta=25°C
200
100
50
20
10
5
1 2 5 10 20 50 100 200 500 1000
EMITTER CURRENT : IE (mA)
Fig.4 Collector-emitter saturation voltage Fig.5 Resistance ratio vs. collector current
vs. collector current
200
Ta=25°C
IE=0A, f=1MHz
100
50
20
10
5
0.5 1 2
5 10 20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
vs. collector-base voltage
5
IC MAX (PULSE)
2
1
0.5
0.2
0.1
0.05
Ta=25°C SINGLE PULSE
When mounted on a 14 18 0.8mm
0.02 glass epoxy board.
0.1 0.2 0.5 1 2
5 10
20
50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Safe operating area
Rev.A
2/2







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