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BUZ12

Part Number	BUZ12
Manufacturer	INCHANGE
Description	N-Channel MOSFET Transistor
Published	Sep 21, 2018
Detailed Description	isc N-Channel Mosfet Transistor BUZ12 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) ·SOA is Pow...
Datasheet	BUZ12 PDF File

Overview

isc N-Channel Mosfet Transistor BUZ12 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.
028Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power .
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=65℃ 42 A IDM Drain Curren...

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