Mode MOSFET. SPN8636 Datasheet

SPN8636 MOSFET. Datasheet pdf. Equivalent

Part SPN8636
Description N-Channel Enhancement Mode MOSFET
Feature SPN8636 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8636 is the N-Channel logic enhancemen.
Manufacture SYNC POWER
Datasheet
Download SPN8636 Datasheet



SPN8636
SPN8636
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8636 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology. The SPN8836 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
High Frequency Synchronous Buck Converter
DC/DC Power System
Load Switch
FEATURES
30V/80A,RDS(ON)=6.0mΩ@VGS=10V
30V/80A,RDS(ON)=9.0mΩ@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
PPAK3x3-8L package design
PIN CONFIGURATION
PPAK3x3-8L
PART MARKING
2018/10/18 Ver 1
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SPN8636
SPN8636
N-Channel Enhancement Mode MOSFET
PPAK3x3-8L PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
S
S
S
G
D
D
D
D
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Part Number
Package
SPN8636DN8RGB
PPAK3x3-8L
SPN8636DN8RGB : Tape Reel ; Pb Free ; Halogen - Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current(Silicon Limited)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Case
TC=25℃
TC=100
TC=25
Part Marking
SPN8636
Symbol
VDSS
VGSS
ID
IDM
IAS
EAS
PD
TJ
TSTG
RθJC
Typical
30
±20
80
57
160
50
180
83
150
-55/150
1.5
Unit
V
V
A
A
A
mJ
W
℃/W
2018/10/18 Ver 1
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