AO4494 N-Channel MOSFET Datasheet

AO4494 Datasheet, PDF, Equivalent


Part Number

AO4494

Description

30V N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AO4494 Datasheet


AO4494
AO4494
30V N-Channel MOSFET
General Description
The AO4494 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is for PWM
applications.
Product Summary
VDS (V) = 30V
ID = 18A
RDS(ON) < 6.5m
RDS(ON) < 9.5m
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
D
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=70°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
Power Dissipation B
TC=25°C
TC=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum
30
±20
18
14
130
32
51
3.1
2
-55 to 150
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Symbol Typ Max
t 10s
Steady-State
RθJA
28
59
40
75
Steady-State
RθJL 16 24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

AO4494
AO4494
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=18A
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=16A
VDS=5V, ID=18A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
TJ=125°C
30
1.5
130
1
5
±100
2 2.5
5.4
8.4
7.5
70
0.75
6.5
10.1
9.5
1
3
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1270
170
87
0.8
1590
240
145
1.5
1900
310
200
2.3
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
24 30 36
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=18A
12 15 18
4.2 5.2 6.2
Qgd Gate Drain Charge
4.7 7.8 11
tD(on)
Turn-On DelayTime
6.7
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.83,
3.5
tD(off)
Turn-Off DelayTime
RGEN=3
22.5
tf Turn-Off Fall Time
4
trr Body Diode Reverse Recovery Time IF=18A, dI/dt=500A/µs
22 28 34
Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs
19 24 30
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
Rev1: Nov. 2010
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


Features AO4494 30V N-Channel MOSFET General Des cription The AO4494 combines advanced t rench MOSFET technology with a low resi stance package to provide extremely low RDS(ON). This device is for PWM applic ations. Product Summary VDS (V) = 30V ID = 18A RDS(ON) < 6.5mΩ RDS(ON) < 9 .5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D G S S S Absolute Maximum Ratings TA= 25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Ga te-Source Voltage VGS Continuous Drai n TC=25°C Current TC=70°C Pulsed Drain Current C Avalanche Current C R epetitive avalanche energy L=0.1mH C I D IDM IAR EAR Power Dissipation B TC= 25°C TC=70°C PD Junction and Storag e Temperature Range TJ, TSTG G Maximu m 30 ±20 18 14 130 32 51 3.1 2 -55 to 150 S Thermal Characteristics Paramet er Maximum Junction-to-Ambient A Maximu m Junction-to-Ambient A D Maximum Junct ion-to-Lead Symbol Typ Max t ≤ 10s Steady-State RθJA 28 59 40 75 St.
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