MOSFET. AO4630 Datasheet

AO4630 MOSFET. Datasheet pdf. Equivalent

Part AO4630
Description MOSFET
Feature AO4630 30V Complementary MOSFET General Description AO4630 uses advanced trench technology to provi.
Manufacture Alpha & Omega Semiconductors
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AO4630
AO4630
30V Complementary MOSFET
General Description
AO4630 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This
complementary N and P channel MOSFET
configuration is ideal for low Input Voltage inverter
applications.
Product Summary
N-Channel
VDS= 30V
ID= 7A (VGS=10V)
RDS(ON)
< 23m(VGS=10V)
< 28m(VGS=4.5V)
< 36m(VGS=2.5V)
100% UIS Tested
100% Rg Tested
P-Channel
-30V
-5A (VGS=-10V)
RDS(ON)
< 48m(VGS=-10V)
< 57m(VGS=-4.5V)
< 78m(VGS=-2.5V)
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
Pin1
Orderable Part Number
AO4630
D1 D2
Top View
S1 1
G1 2
S2 3
G2 4
8
7
6
5
Package Type
SO-8
D1
D1
D2 G1
D2
G2
S1
S2
N-channel
P-channel
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol Max N-channel Max P-channel
Drain-Source Voltage
VDS 30
-30
Gate-Source Voltage
VGS ±12
±12
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH
C
ID
IDM
IAS
EAS
7
5.6
30
14
10
-5
-4
-25
18
16
VDS Spike
10µs
VSPIKE
36
-36
TA=25°C
Power Dissipation B TA=70°C
PD
2
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
mJ
V
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Rev.1.0: Nov 2015
www.aosmd.com
Page 1 of 9



AO4630
AO4630
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±12V
VDS=VGS, ID=250µA
VGS=10V, ID=7A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
VGS=2.5V, ID=5A
Forward Transconductance
VDS=5V, ID=7A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=7A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=2.2,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=7A, di/dt=500A/µs
Body Diode Reverse Recovery Charge IF=7A, di/dt=500A/µs
Min
30
0.65
1.5
Typ
1.05
17.8
28
19
24
35
0.7
670
75
45
3
13
6
1.3
1.8
3
2.5
25
4
6.5
7.5
Max Units
1
5
±100
1.45
23
40
28
36
1
2.5
V
µA
nA
V
m
m
m
S
V
A
pF
pF
pF
4.5
20 nC
12 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: Nov 2015
www.aosmd.com
Page 2 of 9





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