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2SD2101

NPN Transistor

Description

isc Silicon NPN Darlington Power Transistor 2SD2101 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 5A ·High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed ...

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