DatasheetsPDF.com

2SD2106

NPN Transistor

Description

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low f...

INCHANGE

Download 2SD2106 Datasheet

Similar Datasheet

2SD2100 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SD2101 Silicon NPN Transistor - Hitachi Semiconductor
2SD2101 SILICON POWER TRANSISTOR - SavantIC
2SD2101 NPN Transistor - INCHANGE
2SD2102 Silicon NPN Power Transistor - Inchange Semiconductor
2SD2102 Silicon NPN Triple Diffused Transistor - Hitachi Semiconductor
2SD2103 Silicon NPN Transistor - Hitachi Semiconductor
2SD2104 Silicon NPN Transistor - Hitachi Semiconductor
2SD2104 NPN Transistor - INCHANGE
2SD2105 Silicon NPN Transistor - Hitachi

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)