DatasheetsPDF.com

2SD2155

Part Number	2SD2155
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SD2155 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-...
Datasheet	2SD2155 PDF File

Overview

isc Silicon NPN Power Transistor 2SD2155 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SB1429 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃...

Similar Datasheet

2SD2100 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SD2101 Silicon NPN Transistor - Hitachi Semiconductor
2SD2101 SILICON POWER TRANSISTOR - SavantIC
2SD2101 NPN Transistor - INCHANGE
2SD2102 Silicon NPN Power Transistor - Inchange Semiconductor
2SD2102 Silicon NPN Triple Diffused Transistor - Hitachi Semiconductor
2SD2103 Silicon NPN Transistor - Hitachi Semiconductor
2SD2104 Silicon NPN Transistor - Hitachi Semiconductor
2SD2104 NPN Transistor - INCHANGE
2SD2105 Silicon NPN Transistor - Hitachi

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)