DatasheetsPDF.com

2SD2196

Part Number	2SD2196
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 21, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V ·High...
Datasheet	2SD2196 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.
)@ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 22 A IB Base Current- Continuous 1 A IBM Base Current- Peak PC Collector Power Dissipation @TC=25℃ Tj Junct...

Similar Datasheet

2SD2100 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SD2101 Silicon NPN Transistor - Hitachi Semiconductor
2SD2101 SILICON POWER TRANSISTOR - SavantIC
2SD2101 NPN Transistor - INCHANGE
2SD2102 Silicon NPN Power Transistor - Inchange Semiconductor
2SD2102 Silicon NPN Triple Diffused Transistor - Hitachi Semiconductor
2SD2103 Silicon NPN Transistor - Hitachi Semiconductor
2SD2104 Silicon NPN Transistor - Hitachi Semiconductor
2SD2104 NPN Transistor - INCHANGE
2SD2105 Silicon NPN Transistor - Hitachi

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)