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FDG6303N Datasheet, Equivalent, Digital FET.

Dual N-Channel Digital FET

Dual N-Channel Digital FET

 

 

 

Part FDG6303N
Description Dual N-Channel Digital FET
Feature Digital FET, Dual N-Channel FDG6303N G eneral Description These dual N−Chann el logic level enhancement mode field e ffect transistors are produced using ON Semiconductor’s proprietary, high ce ll density, DMOS technology.
This very high density process is especially tail ored to minimize on−state resistance.
This device has been designed especial ly for low voltage applications as a re placement for bipolar digital transisto rs and small signal MOSFETs.
Features 25 V, 0.
50 A Continuous, 1.
5 A Peak ♦ RDS(ON) = 0.
45 W @ VGS = 4.
5 V ♦ RDS(ON) = 0.
60 W @ VGS = 2.
7 V
• Very Low Level Gate Drive Requir .
Manufacture ON Semiconductor
Datasheet
Download FDG6303N Datasheet
Part FDG6303N
Description Dual N-Channel Digital FET
Feature Digital FET, Dual N-Channel FDG6303N G eneral Description These dual N−Chann el logic level enhancement mode field e ffect transistors are produced using ON Semiconductor’s proprietary, high ce ll density, DMOS technology.
This very high density process is especially tail ored to minimize on−state resistance.
This device has been designed especial ly for low voltage applications as a re placement for bipolar digital transisto rs and small signal MOSFETs.
Features 25 V, 0.
50 A Continuous, 1.
5 A Peak ♦ RDS(ON) = 0.
45 W @ VGS = 4.
5 V ♦ RDS(ON) = 0.
60 W @ VGS = 2.
7 V
• Very Low Level Gate Drive Requir .
Manufacture ON Semiconductor
Datasheet
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