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FDG6303N

ON Semiconductor

Dual N-Channel Digital FET


Description
Digital FET, Dual N-Channel FDG6303N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low vol...



ON Semiconductor

FDG6303N

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