N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Description
March 2002
AO4406 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion.
Features
VDS (V) = 30V ID = 11.5A RDS(ON) <...
