DatasheetsPDF.com

3SK298

Part Number	3SK298
Manufacturer	Hitachi Semiconductor
Description	Silicon N-Channel Dual Gate MOS FET
Published	Mar 30, 2005
Detailed Description	3SK298 Silicon N-Channel Dual Gate MOS FET ADE-208-390 1st. Edition Application UHF / VHF RF amplifier Features • Low...
Datasheet	3SK298 PDF File

Overview

3SK298 Silicon N-Channel Dual Gate MOS FET ADE-208-390 1st.
Edition Application UHF / VHF RF amplifier Features • Low noise figure.
NF = 1.
0 dB typ.
at f = 200 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 4 1 1.
Source 2.
Gate1 3.
Gate2 4.
Drain 3SK298 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 100 150 –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handlin...

Similar Datasheet

3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD - NEC
3SK207 Silicon N Channel Dual Gate MOS Type FET - Toshiba Semiconductor
3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD - NEC
3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD - NEC
3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD - NEC
3SK225 Silicon N Channel Dual Gate MOS Type FET - Toshiba Semiconductor
3SK226 Silicon N Channel Dual Gate MOS Type FET - Toshiba Semiconductor
3SK227 Silicon N-Channel 4-pin MOSFET - Panasonic
3SK228 Silicon NPN Triple Diffused - Hitachi Semiconductor
3SK231 MOSFET - NEC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)