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2SD2144
High-current Gain Medium Power Transistor
Description
Transistor
s High-current Gain Medium Power
Transistor
(20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type
NPN
silicon
transistor
FExternal dimensions (Units: mm) (96-232-C107) 2...
Rohm
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