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2SD2531

Silicon NPN Transistor

Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2531 Power Amplifier Applications 2SD2531 Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (typ.) (IC = 2.5 A, IB = 0.25 A) High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Coll...

Toshiba Semiconductor

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