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IRF6609

International Rectifier

Power MOSFET


Description
PD - 95822A HEXFET® Power MOSFET Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l IRF6609 Qg 46nC VDSS 20V RDS(on) max 2.0mΩ@VGS = 10V 2.6mΩ@VGS = 4.5V Applicable DirectFET Outline and Substrate Outline (see p.8,...



International Rectifier

IRF6609

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