DatasheetsPDF.com

MGF0919A

Mitsubishi

L & S BAND GaAs FET [ SMD non matched ]


Description
MITSUBISHI SEMICONDUCTOR MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm High power gain Gp=19dB(TYP.) @f=1.9GHz High power added efficiency ηadd=37%(TYP.) @f=1.9GHz,Pin...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)