MITSUBISHI SEMICONDUCTOR
MGF0919A
L & S BAND GaAs FET [ SMD non – matched ]
DESCRIPTION
The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm High power gain Gp=19dB(TYP.) @f=1.9GHz High power added efficiency ηadd=37%(TYP.) @f=1.9GHz,Pin...