NPN Transistor. NTE2506 Datasheet

NTE2506 Transistor. Datasheet pdf. Equivalent

Part NTE2506
Description Silicon NPN Transistor
Feature NTE2506 Silicon NPN Transistor High Frequency Video Driver Description: The NTE2506 is a silicon NPN.
Manufacture NTE
Datasheet
Download NTE2506 Datasheet



NTE2506
NTE2506
Silicon NPN Transistor
High Frequency Video Driver
Description:
The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the
cascode stage of the driver for high–resolution color graphics monitors.
Features:
D High Breakdown Voltage
D Low Output Capacitance
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95V
Collector–Emitter Voltage (RBE = 100), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Power Dissipation (TS +85°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Soldering Point (TS +85°C, Note 1), RthJS . . . . . . . . . . 18K/W
Note 1. TS is the temperature at the soldering point of the collector lead.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage V(BR)CBO IC = 0.1mA
115 – – V
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA
95 – – V
V(BR)CER IC = 10mA, RBE = 100
110 – – V
Emitter–Base Breakdown Voltage V(BR)EBO IE = 0.1mA
3––V
Collector Cutoff Current
ICES IB = 0, VCE = 50V
– – 100 µA
ICBO IE = 0, VCB = 50V
– – 20 µA
DC Current Gain
hFE IC = 100mA, VCE = 10V, TA = +25°C
20 35 –
Transition Frequency
fT IC = 100mA, VCE = 10V, f = 100MHz, 0.8 1.2 – GHz
TA = +25°C
Collector–Base Capacitance
Ccb IC = 0, VCB = 10V, f = 1MHz, TA = +25°C – 2.0 – pF
Collector Capacitance
Cc IE = ie = 0, VCB = 10V f = 1MHz
– 3.5 – pF



NTE2506
.450
(11.4)
Max
.330 (8.38) Max
.175
(4.45)
Max
.655
(16.6)
Max
.118
(3.0)
Dia
ECB
.030 (.762) Dia
.130 (3.3)
Max
.090 (2.28)







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