Complementary Transistors. NTE2517 Datasheet

NTE2517 Transistors. Datasheet pdf. Equivalent

Part NTE2517
Description Silicon Complementary Transistors
Feature NTE2517 (NPN) & NTE2518 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low .
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Datasheet
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NTE2517
NTE2517 (NPN) & NTE2518 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Saturation Voltage
D High Current Capacity and Wide ASO
Applications:
D Voltage Regulators
D Relay Drivers
D Lamp Drivers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
ICBO
IEBO
hFE
fT
VCB = 50V, IE = 0
VEB = 4V, IC = 0
VCE = 2V, IC = 100mA
VCE = 2V, IC = 2A
VCE = 10V, IC = 50mA
Min Typ Max Unit
– – 100 nA
– – 100 nA
140 – 400
35 – –
– 140 – MHz



NTE2517
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
NTE2517
NTE2518
Cob VCB = 10V, f = 1MHz
10 pF
25 pF
Collector to Emitter Saturation Voltage
NTE2517
NTE2518
VCE(sat) IC = 1A, IB = 50mA
110 300 mV
250 500 mV
Base to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
TurnOn Time
Storage Time
NTE2517
NTE2518
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC = 1A, IB = 50mA
IC = 10µA, IE = 0
IC = 1mA, RBE =
IE = 10µA, IC = 0
IC = 10A, IB1 = 10A,
IB2 = 1A
0.85 1.2
60 – –
50 – –
6––
35
V
V
V
V
ns
550
350
ns
ns
Fall Time
tf
30 ns
.315 (8.0)
.118 (3.0)
Dia
.295
(7.5)
EC B
.433
(11.0)
.130
(3.3)
.610
(15.5)
.094 (2.4)







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