Complementary Transistors. NTE2524 Datasheet

NTE2524 Transistors. Datasheet pdf. Equivalent

Part NTE2524
Description Silicon Complementary Transistors
Feature NTE2524 (NPN) & NTE2525 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low .
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Datasheet
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NTE2524
NTE2524 (NPN) & NTE2525 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Collector–Emitter Saturation Voltage
D High Current and High fT
D Excellent Linearity of hFE
D Fast Switching Time
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
NTE2524
NTE2525
ICBO
IEBO
hFE
fT
VCB = 40V, IE = 0
VEB = 4V, IC = 0
VCE = 2V, IC = 500mA
VCE = 2V, IC = 6A
VCE = 5V, IC = 1A
Output Capacitance
NTE2524
Cob
VCB = 10V, f = 1MHz
NTE2525
Min Typ Max Unit
– – 1.0 µA
– – 1.0 µA
100 – 400
35 – –
– 180 – MHz
– 130 – MHz
– 65 – pF
– 95 – pF



NTE2524
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
CollectorEmitter Saturation Voltage
NTE2524
NTE2525
VCE(sat)
IC = 4A, IB = 200mA
BaseEmitter Saturation Voltage
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
TurnOn Time
Storage Time
NTE2524
NTE2525
VBE(sat) IC = 4A, IB = 200mA
V(BR)CBO IC = 10µA, IE = 0
V(BR)CEO IC = 1mA, RBE =
V(BR)EBO IE = 10µA, IC = 0
ton VCC = 25V, VBE = 5V,
tstg
10IB1 = 10IB2 = IC = 4A,
Pulse Width = 20µs,
Duty Cycle 1%, Note 1
60
50
6
Fall Time
tf
Typ
200
250
0.95
50
500
450
20
Max Unit
400 mV
500 mV
1.2 V
V
V
V
ns
ns
ns
ns
Note 1. For NTE2525, the polarity is reversed.
.256 (6.5)
.197 (5.0)
.090 (2.3)
.059 (1.5)
.275
(7.0)
BCE
.295
(7.5)
.090 (2.3)
.002 (0.5)
.002(0.5)







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