Complementary Transistors. NTE2530 Datasheet

NTE2530 Transistors. Datasheet pdf. Equivalent

Part NTE2530
Description Silicon Complementary Transistors
Feature NTE2530 (NPN) & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High.
Manufacture NTE
Datasheet
Download NTE2530 Datasheet




NTE2530
NTE2530 (NPN) & NTE2531 (PNP)
Silicon Complementary Transistors
High Voltage Driver
Features:
D High Current Capacity: IC = 2A
D High Breakdown Voltage: VCEO = 400V Min
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
NTE2530
NTE2531
ICBO
IEBO
hFE
fT
VCB = 300V, IE = 0
VEB = 4V, IC = 0
VCE = 10V, IC = 100mA
VCE = 10V, IC = 100mA
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
VCE(sat) IC = 500mA, IB = 50mA
VBE(sat) IC = 500mA, IB = 50mA
V(BR)CBO IC = 10µA, IE = 0
V(BR)CEO IC = 1mA, RBE =
V(BR)EBO IE = 10µA, IC = 0
Min Typ Max Unit
– – 1.0 µA
– – 1.0 µA
40 – 200
– 60 – MHz
– 40 – MHz
– – 1.0 V
– – 1.0 V
400 – – V
400 – – V
5 – –V



NTE2530
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
NTE2530
NTE2531
Cob
VCB = 30V, f = 1MHz
15 pF
25 pF
TurnOn Time
NTE2530
NTE2531
Storage Time
NTE2530
NTE2531
ton VCC = 150V, VBE = 5V,
0.085 µs
10IB1 = 10IB2 = IC = 500mA,
RL = 300, RB = 20,
0.12
µs
tstg
at IC = 500mA,
Pulse Width = 20µs,
4.0 µs
Duty Cycle 1%, Note 1
3.0 µs
Fall Time
NTE2530
tf
0.6 µs
NTE2531
0.3 µs
Note 1. For NTE2531, the polarity is reversed.
.256 (6.5)
.197 (5.0)
.090 (2.3)
.059 (1.5)
.275
(7.0)
BCE
.295
(7.5)
.090 (2.3)
.002 (0.5)
.002(0.5)







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