Complementary Transistors. NTE2545 Datasheet

NTE2545 Transistors. Datasheet pdf. Equivalent

Part NTE2545
Description Silicon Complementary Transistors
Feature NTE2545 (NPN) & NTE2546 (PNP) Silicon Complementary Transistors Darlington, High Speed Driver Featur.
Manufacture NTE
Datasheet
Download NTE2545 Datasheet




NTE2545
NTE2545 (NPN) & NTE2546 (PNP)
Silicon Complementary Transistors
Darlington, High Speed Driver
Features:
D High Speed Switching
D Wide ASO Range
D High Gain Bandwidth Product
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Collector Emitter Saturation Volt-
age
NTE2545
ICBO
IEBO
hFE
fT
VCE(sat)
VCB = 40V, IE = 0
VEB = 5V, IC = 0
VCE = 2V, IC = 2.5A
VCE = 5V, IC = 2.5A
IC = 2.5A, IB = 5mA
NTE2546
Base Emitter Saturation Voltage
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
VBE(sat) IC = 2.5A, IB = 5mA
V(BR)CBO IC = 5mA, IE = 0
V(BR)CEO IC = 50mA, RBE =
Min Typ Max Unit
– – 0.1 mA
– – 3.0 mA
2000 5000 –
– 200 – MHz
– 0.9 – V
– 1.0 1.5
– – 2.0
70 – –
60 – –
V
V
V
V



NTE2545
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
TurnOn Time
Storage Time
NTE2545
NTE2546
ton VCC = 20V, VBE = 5V,
tstg
500IB1 = 500IB2 = IC = 2A,
Pulse Width = 50µs,
Duty Cycle 1%, Note 1
0.3 µs
1.2 µs
1.3 µs
Fall Time
tf
0.2 µs
Note 1. For NTE2546, the polarity is reversed.
NTE2545
(NPN)
C
B
.420 (10.67)
Max
.110 (2.79)
E
.147 (3.75)
Dia Max
.500
(12.7)
Max
NTE2546
(PNP)
.070 (1.78) Max
C Base
B
.100 (2.54)
E
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab







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