Silicon Transistors. NTE2564 Datasheet

NTE2564 Transistors. Datasheet pdf. Equivalent

Part NTE2564
Description Complementary Silicon Transistors
Feature NTE2564 (NPN) & NTE2565 (PNP) Complementary Silicon Transistors High Current Switch Features: D Low .
Manufacture NTE
Datasheet
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NTE2564
NTE2564 (NPN) & NTE2565 (PNP)
Complementary Silicon Transistors
High Current Switch
Features:
D Low Collector Emitter Saturation Voltage
D High Current Capacity
Applications:
D Relay Drivers
D High Speed Inverters
D Converters
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Collector Emitter Saturation Volt-
age
NTE2564
ICBO
IEBO
hFE
fT
VCE(sat)
VCB = 40V, IE = 0
VEB = 4V, IC = 0
VCE = 2V, IC = 1A
VCE = 2V, IC = 4A
VCE = 5V, IC = 1A
IC = 3A, IB = 150mA
NTE2565
Min Typ Max Unit
– – 0.1 mA
– – 0.1 mA
100 – 280
30 – –
– 120 – MHz
– – 0.4 V
– – 0.5 V



NTE2564
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
TurnOn Time
Storage Time
NTE2564
NTE2565
V(BR)CBO IC = 1mA, IE = 0
V(BR)CEO IC = 1mA, RBE =
V(BR)EBO IE = 1mA, IC = 0
ton VCC = 10V, VBE = 5V,
tstg
20IB1 = 20IB2 = IC = 4A,
Pulse Width = 20µs,
Duty Cycle 1%, Note 1
60 – – V
30 – – V
6––V
0.1 µs
0.5 µs
0.2 µs
Fall Time
tf
1.6 µs
Note 1. For NTE2565, the polarity is reversed.
.402 (10.2)
.035
(0.9)
BC E
.346
(8.8)
.433
(11.0)
.100 (2.54)
.177 (4.5)
.051 (1.3)
.019 (0.5)







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