Complementary Transistors. NTE2566 Datasheet

NTE2566 Transistors. Datasheet pdf. Equivalent

Part NTE2566
Description Silicon Complementary Transistors
Feature NTE2566 (NPN) & NTE2567 (PNP) Silicon Complementary Transistors High Current, High Speed Switch Feat.
Manufacture NTE
Datasheet
Download NTE2566 Datasheet




NTE2566
NTE2566 (NPN) & NTE2567 (PNP)
Silicon Complementary Transistors
High Current, High Speed Switch
Features:
D Low Saturation Voltage
D Fast Switching Speed
D Isolated TO220 Type Package
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Power Dissipation, PC
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Collector–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
ICBO
IEBO
hFE
fT
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB = 40V, IE = 0
VEB = 4V, IC = 0
VCE = 2V, IC = 1A
VCE = 2V, IC = 5A
VCE = 5V, IC = 1A
IC = 6A, IB = 0.6A
IC = 1mA, IE = 0
IC = 1mA, RBE =
IE = 1mA, IC = 0
Min Typ Max Unit
– – 0.1 mA
– 0.1 mA
100 – 200
30 – –
– 10 – MHz
– – 0.4 V
60 – – V
50 – – V
6––V



NTE2566
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
TurnOn Time
NTE2566
NTE2567
Storage Time
NTE2566
NTE2567
ton IC = 5A, IB1 = 20A,
IB2 = 20A, VCC = 20V,
Pulse Width = 20µs,
Duty Cycle 1%
tstg
0.1
0.2
1.2
0.4
µs
µs
µs
µs
Collector Current Fall Time
NTE2566
NTE2567
tf
0.05
0.1
µs
µs
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
BCE
.122 (3.1)
Dia
.165
(4.2)
.531
(13.5)
Min
.173 (4.4) Max
.114 (2.9) Max
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated







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