Complementary Transistors. NTE2570 Datasheet

NTE2570 Transistors. Datasheet pdf. Equivalent

Part NTE2570
Description Silicon Complementary Transistors
Feature NTE2570 (NPN) & NTE2571 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low .
Manufacture NTE
Datasheet
Download NTE2570 Datasheet




NTE2570
NTE2570 (NPN) & NTE2571 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Collector–Emitter Saturation Voltage
D High Current Capacity
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cut–Off Current
Emitter Cut–Off Current
DC Current Gain
Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
NTE2570
NTE2571
ICBO
IEBO
hFE
fT
VCE(sat)
VCB = 80V, IE = 0
VEB = 4V, IC = 0
VCE = 2V, IC = 1A
VCE = 2V, IC = 4A
VCE = 5V, IC = 1A
IC = 5A, IB = 10mA
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC = 1mA, IE = 0
IC = 1mA, RBE =
IC = 1mA, IC = 0
Min Typ Max Unit
– – 0.1 mA
– – 3.0 mA
100 – 280
30 – –
– 20 – MHz
– – 0.4 V
– – 0.5 V
90 – – V
80 – – V
6––V



NTE2570
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
TurnOn Time
NTE2570
NTE2571
Storage Time
NTE2570
NTE2571
ton VCC = 50V, VBE = 5V,
10IB1 = 10IB2 = IC = 2A,
Pulse Width = 20µs
Duty Cycle 1%
tstg
0.1 µs
0.2 µs
1.6 µs
0.7 µs
Fall Time
NTE2570
NTE2571
tf
0.4 µs
0.2 µs
Note 1. For NTE2571, the polarity is reversed.
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
BCE
.122 (3.1)
Dia
.165
(4.2)
.531
(13.5)
Min
.173 (4.4) Max
.114 (2.9) Max
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated







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