NPN Transistor. NTE2583 Datasheet

NTE2583 Transistor. Datasheet pdf. Equivalent

Part NTE2583
Description Silicon NPN Transistor
Feature NTE2583 Silicon NPN Transistor High Speed Switching Regulator Features: D High Breakdown Voltage and.
Manufacture NTE
Datasheet
Download NTE2583 Datasheet




NTE2583
NTE2583
Silicon NPN Transistor
High Speed Switching Regulator
Features:
D High Breakdown Voltage and High Reliability
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Width 300µs, Duty Cycle 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
VCB = 400V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 1.6A
VCE = 5V, IC = 8A
Current Gain–Bandwidth Product
Output Capacitance
Collector–Emitter Saturation Voltage
fT
Cob
VCE(sat)
VCE = 5V, IC = 10mA
VCE = 10V, IC = 1.6A
VCB = 10V, f = 1MHz
IC = 6A, IB = 1.6A
Base–Emitter Saturation Voltage
VBE(sat) IC = 6A, IB = 1.6A
Min Typ Max Unit
– – 10 µA
– – 10 µA
20 – 50
10 –
10 –
– 20 – MHz
– 120 – pF
– – 0.8 V
– – 1.5 V



NTE2583
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorBase Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0
500 – – V
CollectorEmitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE =
400 – – V
EmitterBase Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
7––V
CollectorEmitter Sustaining Voltage VCEX(sus) IC = 4.5A, IB1 = 0.45A, IB2 = 1.8A, 400 – – V
L = 500µH, Clamped
TurnOn Time
Storage Time
Fall Time
ton IC = 7A, IB1 = 1.4A, IB2 = 2.8A,
– – 0.5 µs
tstg RL = 28.6, VCC = 200V, Note 2 – – 2.5 µs
tf – – 0.3 µs
Note 2. Pulse Width = 20µs, Duty Cycle 1%.
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
BCE
.122 (3.1)
Dia
.165
(4.2)
.531
(13.5)
Min
.173 (4.4) Max
.114 (2.9) Max
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated







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