NPN Transistor. NTE2586 Datasheet

NTE2586 Transistor. Datasheet pdf. Equivalent

Part NTE2586
Description Silicon NPN Transistor
Feature NTE2586 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, H.
Manufacture NTE
Datasheet
Download NTE2586 Datasheet




NTE2586
NTE2586
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide ASO Range
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Test: Pulsed Width 300µs, Duty Cycle 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Output Capacitance
Collector Emitter Saturation Voltage
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VCB = 800V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC =200mA
VCE = 5V, IC = 1A
VCE = 10V, IC = 200mA
VCB = 10V, f = 1MHz
IC = 1.5A, IB = 300mA
Min Typ Max Unit
– – 10 µA
– – 10 µA
15 – 40
8––
– 15 – MHz
– 60 – pF
– – 2.0 V



NTE2586
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Base Emitter Saturation Voltage
VBE(sat) IC =1.5A, IB = 300mA
– – 1.5 V
Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
1100 – – V
Collector Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE =
800 – – V
Emitter Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0
7––V
Collector Emitter Sustaining Voltage VCEX(sus) IC = 1.5A, IB1 = IB2 = 300mA, 800 – – V
L = 2mH, Clamped
TurnOn Time
Storage Time
Fall Time
ton VCC = 400V, IC = 2A,
tstg
IB1 = 0.4A, IB2 = 0.8A,
RL = 200
tf
– – 0.5 µs
– – 3.0 µs
– – 0.3 µs
.402 (10.2)
.035
(0.9)
BC E
.346
(8.8)
.433
(11.0)
.100 (2.54)
.177 (4.5)
.051 (1.3)
.019 (0.5)







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