NPN Transistor. NTE2588 Datasheet

NTE2588 Transistor. Datasheet pdf. Equivalent

Part NTE2588
Description Silicon NPN Transistor
Feature NTE2588 Silicon NPN Transistor Horizontal Output for HDTV Features: D High Breakdown Voltage: V(BR)C.
Manufacture NTE
Datasheet
Download NTE2588 Datasheet




NTE2588
NTE2588
Silicon NPN Transistor
Horizontal Output for HDTV
Features:
D High Breakdown Voltage: V(BR)CEO = 1200V Min
D Isolated TO220 Type Package
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.3°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Output Capacitance
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
VCB = 1200V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 1.5A
VCE = 10V, IC = 1.5A
IC = 3mA, IB = 0.6mA
IC = 3mA, IB = 0.6mA
IC = 100µA, IE = 0
IC = 1mA, RBE =
IE = 100µA, IC = 0
VCB = 100V, f = 1MHz
Min Typ Max Unit
– – 1 µA
– 1 µA
10 – 60
– 6 – MHz
––5V
––2V
1500 – – V
1200 – – V
5––V
– 2.0 – pF



NTE2588
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
BCE
.122 (3.1)
Dia
.165
(4.2)
.531
(13.5)
Min
.173 (4.4) Max
.114 (2.9) Max
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated







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