NPN Transistor. NTE2594 Datasheet

NTE2594 Transistor. Datasheet pdf. Equivalent

Part NTE2594
Description Silicon NPN Transistor
Feature NTE2594 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage,.
Manufacture NTE
Datasheet
Download NTE2594 Datasheet




NTE2594
NTE2594
Silicon NPN Transistor
High Voltage, High Current Switch
Features:
D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Pulsed (PW 300µs, Duty Cycle 10%) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
ICBO VCB = 500V, IE = 0
IEBO VEB = 5V, IC = 0
hFE VCE = 5V, IC = 1.2A
VCE = 5V, IC = 6A
fT VCE = 10V, IC = 1.2A
Cob VCB = 10V, f = 1MHz
VCE(sat) IC = 6A, IB = 1.2A
VBE(sat) IC = 6A, IB = 1.2A
V(BR)CBO IC = 1mA, IE = 0
V(BR)CEO IC = 5mA, RBE =
V(BR)EBO IE = 1mA, IC = 0
Min Typ Max Unit
– – 10 µA
– – 10 µA
15 – 50
8––
– 18 – MHz
– 160 – pF
– – 1.0 V
– – 1.5 V
800 – – V
500 – – V
7––V



NTE2594
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorEmitter Sustaining Voltage VCEX(sus) IC = 5A, IB1 = IB2 = 2A, L = 500µH,
Clamped
500 – – V
TurnOn Time
Storage Time
Fall Time
ton 5IB1 = 2.5IB2 = IC = 7A,
tstg VCC = 200V, RL = 28.6
tf
– – 0.5 µs
– – 3.0 µs
– – 0.3 µs
.123 (3.1)
.221 (5.6)
.134 (3.4) Dia
.630 (16.0)
.315
(8.0)
.866
(22.0)
C
B CE
.158 (4.0)
.804
(20.4)
.215 (5.45)
.040 (1.0)







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)