NPN Transistor. NTE2596 Datasheet

NTE2596 Transistor. Datasheet pdf. Equivalent

Part NTE2596
Description Silicon NPN Transistor
Feature NTE2596 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage,.
Manufacture NTE
Datasheet
Download NTE2596 Datasheet




NTE2596
NTE2596
Silicon NPN Transistor
High Voltage, High Current Switch
Features:
D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide ASO Range
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Emitter–to–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VCB = 500V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 4.8A
VCE = 5V, IC = 24A
IC = 24A, IB = 4.8A
IC = 24A, IB = 4.8A
Min Typ Max Unit
– – 10 µA
– – 10 µA
20 – 50
8––
– – 1.0 V
– – 1.5 V



NTE2596
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorBase Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
CollectorEmitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE =
EmitterBase Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0
CollectorEmitter Sustaining Voltage VCEX(sus) IC = 15A, IB1 = IB2 = 2A,
L = 100µH, Clamped
800 – – V
500 – – V
7––V
500 – – V
TurnOn Time
Storage Time
Fall Time
ton VCC = 200V,
tstg
5IB1 = 2.5IB2 = IC = 26A,
RL = 7.7
tf
– – 0.5 µs
– – 3.0 µs
– – 0.2 µs
.236
(6.0)
.810 (20.57)
Max
.137 (3.5)
Dia Max
.204 (5.2)
1.030
(26.16)
.098
(2.5)
.787
(20.0)
.215 (5.45)
.040 (1.0)
.023 (0.6)
BC E
Note: Collector connected to heat sink







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)