NPN Transistor. NTE2597 Datasheet

NTE2597 Transistor. Datasheet pdf. Equivalent

Part NTE2597
Description Silicon NPN Transistor
Feature NTE2597 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage an.
Manufacture NTE
Datasheet
Download NTE2597 Datasheet




NTE2597
NTE2597
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
D High Breakdown Voltage and Reliability
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Collector Dissipation, PD
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VCB = 800V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 0.8A
VCE = 5V, IC = 4A
IC = 6A, IB = 1.2A
IC = 6A, IB = 1.2A
Min Typ Max Unit
– – 10 µA
– – 10 µA
10 – 40
8––
– – 2.0 V
– – 1.5 V



NTE2597
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
GainBandwidth Product
fT VCE = 10V, IC = 0.8A
Output Capacitance
Cob VCB = 10V, f = 1MHz
CollectorBase Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
CollectorEmitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE =
EmitterBase Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0
CollectorEmitter Sustaining Voltage VCEX(sus) IC = 6A, IB1 = 1.2A, IB2 = 1.2A,
L = 500µH Clamped
1100
800
7
800
15
215
MHz
pF
V
V
V
V
TurnOn Time
Storage Time
Fall Time
ton IC = 8A, IB1 = 1.6A,
tstg
IB2 = 3.2A, RL = 50,
VCC = 400V
tf
– – 0.5 µs
– – 3.0 µs
– – 0.3 µs
.123 (3.1)
.221 (5.6)
.134 (3.4) Dia
.630 (16.0)
.315
(8.0)
.866
(22.0)
BCE
.158 (4.0)
.804
(20.4)
.215 (5.45)
.040 (1.0)







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)