NPN Transistor. NTE2598 Datasheet

NTE2598 Transistor. Datasheet pdf. Equivalent

Part NTE2598
Description Silicon NPN Transistor
Feature NTE2598 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage,.
Manufacture NTE
Datasheet
Download NTE2598 Datasheet




NTE2598
NTE2598
Silicon NPN Transistor
High Voltage, High Current Switch
Features:
D High Breakdown Voltage, Reliability
D fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Base Current. IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Output Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
VCB = 800V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 1.6A
VCE = 5V, IC = 8A
VCE = 10V, IC = 1.6A
VCB = 10V, f = 1MHz
IC = 12A, IB = 2.4A
IC = 12A, IB = 2.4A
Min Typ Max Unit
– – 10 µA
– – 10 µA
15 – 40
8––
– 15 – MHz
– 470 – pF
– – 2.0 V
– – 1.5 V



NTE2598
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
CollectorEmitter Sustaining Voltage
V(BR)CBO IC = 1mA, IE = 0
V(BR)CEO IC = 10A, RBE =
V(BR)EBO IE = 1mA, IC = 0
VCEO(sus) IC = 12A, IB1 = IB2 = 2.4A,
l = 50µH, Clamped
1100
800
7
800
V
V
V
V
TurnOn Time
Storage Time
Fall Time
ton VCC = 400V,
tstg
5IB1 = 2.5IB2 = IC = 20A,
RL = 20
tf
– – 0.5 µs
– – 3.0 µs
– – 0.3 µs
.236
(6.0)
.810(20.57)
Max
.137 (3.5)
Dia Max
.204 (5.2)
1.030
(26.16)
.098
(2.5)
.787
(20.0)
.215 (5.45)
.040 (1.0)
.023
(0.6)
BCE
Note: Collector connected to heat sink.







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