SILICON TRANSISTOR. 2SC5966 Datasheet

2SC5966 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SC5966
Description NPN SILICON TRANSISTOR
Feature www.DataSheet4U.com Ordering number : ENN7653 2SC5966 NPN Triple Diffused Planar Silicon Transistor.
Manufacture Sanyo Semicon Device
Datasheet
Download 2SC5966 Datasheet




2SC5966
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Ordering number : ENN7653
2SC5966
NPN Triple Diffused Planar Silicon Transistor
2SC5966
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
High-speed.
High breakdown voltage (VCBO=1700V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
Package Dimensions
unit : mm
2174A
[2SC5966]
16.0 3.4
5.6
3.1
2.8
2.0 2.1
0.7 0.9
12 3
5.45
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
5.45
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Conditions
Tc=25°C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Ratings
1700
800
5
20
40
3.0
100
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Parameter
Collector Cutoff Current
Collector-to-Emitter Breakdown Voltage
Emitter Cutoff Current
Symbol
Conditions
ICBO
ICES
V(BR)CEO
IEBO
VCB=800V, IE=0
VCE=1700V, RBE=0
IC=10mA, RBE=
VEB=4V, IC=0
min
800
Ratings
typ
max
Unit
10 µA
1.0 mA
V
1.0 mA
Continued on next page.
DataShee
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
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D a t a S h e4e Ut . c o m
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41504KD TS IM TA-100799 No.7653-1/4
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2SC5966
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2SC5966
Continued from preceding page.
Parameter
DC Current Gain
Collectoe-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
Symbol
hFE1
hFE2
VCE(sat)
VBE(sat)
tstg
tf
Conditions
VCE=5V, IC=1A
VCE=5V, IC=15A
IC=13.5A, IB=3.4A
IC=13.5A, IB=3.4A
IC=10A, IB1=1.6A, IB2=--5.0A
IC=10A, IB1=1.6A, IB2=--5.0A
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
50
+
100µF
VBE= --5V
OUTPUT
RL=20
+
470µF
VCC=200V
min
15
4
Ratings
typ
max
7
3
1.5
3.0
0.2
Unit
V
V
µs
µs
et4U.com
IC -- VCE
16
14
1.2A 1.4A 1.6A 1.8A
1.0A
2.0A
0.8A
12
DataSheet4U.com
25
20
IC -- VBE
VCE=5V
DataShee
10
0.6A
8
0.4A
6 0.2A
4 0.1A
2
0
0
100
7
5
3
2
IB=0
1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT06356
hFE -- IC
Ta=120°C
VCE=5V
25°C
--40°C
10
7
5
3
2
DataSheet4U.com1.00.1
2 3 5 7 1.0
2 3 5 7 10
23
Collector Current, IC -- A
IT06358
DataSheet4 U .com
15
10
5
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
10
7 IC / IB=5
IT06357
5
3
2
1.0
7
5
3
2
25°C
0.1
7 Ta= --40°C
5
3 120°C
2
--40°C
0.01
0.1
2 3 5 7 1.0
2 3 5 7 10
23
Collector Current, IC -- A
IT06359
No.7653-2/4
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