MOSFET. AO4609 Datasheet

AO4609 MOSFET. Datasheet pdf. Equivalent

AO4609 Datasheet
Recommendation AO4609 Datasheet
Part AO4609
Description MOSFET
Feature AO4609; July 2003 AO4609 Complementary Enhancement Mode Field Effect Transistor General Description The AO4.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO4609 Datasheet





Alpha & Omega Semiconductors AO4609
July 2003
AO4609
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4609 uses advanced trench
technology MOSFETs to provide
excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be
used to form a level shifted high side
switch, and for a host of other
applications.
Features
n-channel
VDS (V) = 30V
ID = 8.5A
RDS(ON)
< 18m(VGS=10V)
< 28m(VGS=4.5V)
p-channel
-30V
-3A
RDS(ON)
< 130m(VGS = 10V)
< 180m(VGS = 4.5V)
< 260m(VGS = 2.5V)
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S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D2 D1
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
8.5
6.6
40
Power Dissipation
TA=25°C
TA=70°C
PD
2
1.28
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±12
-3
-2.4
-6
2
1.28
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
t 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Maximum Junction-to-Ambient A
t 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
48 62.5 °C/W
74 110 °C/W
35 40 °C/W
56 62.5 °C/W
81 110 °C/W
40 48 °C/W



Alpha & Omega Semiconductors AO4609
AO4609
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=8.5A
VGS=4.5V, ID=6A
Forward Transconductance
VDS=5V, ID=8.5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=8.5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.8,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=8.5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs
Min
30
1
30
Typ
1.8
15.5
22.3
23
23
0.75
1040
180
110
0.7
19.2
9.36
2.6
4.2
5.2
4.4
17.3
3.3
16.7
6.7
Max Units
V
1
5
µA
100 nA
3V
A
18
27
m
28 m
S
1V
3A
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.



Alpha & Omega Semiconductors AO4609
AO4609
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-3A
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2A
VGS=-2.5V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-3A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=-4.5V, VDS=-15V, ID=-3A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=5,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=-3A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs
Min
-30
-0.6
-10
3
Typ Max Units
-1
-5
±100
-1 -1.4
102
154
128
187
4.5
-0.85
130
200
180
260
-1
-2
V
µA
nA
V
A
m
m
m
S
V
A
409 pF
55 pF
42 pF
12
4.4 nC
0.8 nC
1.32 nC
5.3 ns
4.4 ns
31.5 ns
8 ns
15.8 ns
8 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.





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