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AO4609 Datasheet, Equivalent, MOSFET.MOSFET MOSFET |
| Part | AO4609 |
|---|---|
| Description | MOSFET |
| Feature | July 2003
AO4609 Complementary Enhancem ent Mode Field Effect Transistor
Genera l Description
The AO4609 uses advanced trench technology MOSFETs to provide ex cellent RDS(ON) and low gate charge. Th e complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Features n-channel p-channel -30V VDS ( V) = 30V ID = 8. 5A -3A RDS(ON) RDS(ON) < 18mΩ (VGS=10V) < 130mΩ (VGS = 10V ) < 28mΩ (VGS=4. 5V) < 180mΩ (VGS = 4. 5V) < 260mΩ (VGS = 2. 5V) D2 S2 G2 S1 G1 www. DataSheet4U. com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 SO IC-8 n-channel p-chann . |
| Manufacture | Alpha & Omega Semiconductors |
| Datasheet |
| Part | AO4609 |
|---|---|
| Description | MOSFET |
| Feature | July 2003
AO4609 Complementary Enhancem ent Mode Field Effect Transistor
Genera l Description
The AO4609 uses advanced trench technology MOSFETs to provide ex cellent RDS(ON) and low gate charge. Th e complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Features n-channel p-channel -30V VDS ( V) = 30V ID = 8. 5A -3A RDS(ON) RDS(ON) < 18mΩ (VGS=10V) < 130mΩ (VGS = 10V ) < 28mΩ (VGS=4. 5V) < 180mΩ (VGS = 4. 5V) < 260mΩ (VGS = 2. 5V) D2 S2 G2 S1 G1 www. DataSheet4U. com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 SO IC-8 n-channel p-chann . |
| Manufacture | Alpha & Omega Semiconductors |
| Datasheet |
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