Power MOSFET. IRF6662 Datasheet

IRF6662 MOSFET. Datasheet pdf. Equivalent


International Rectifier IRF6662
www.DataSheet4U.com
Lead and Bromide Free
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques
PD - 97039
IRF6662
DirectFETPower MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
100V max ±20V max 17.5m@ 10V
Qg tot
Qgd
Vgs(th)
22nC
6.8nC
3.9V
MZ
DirectFETISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MZ
Description
The IRF6662 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6662 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Max.
100
±20
8.3
6.6
47
66
39
4.9
Units
V
A
mJ
A
100
ID = 4.9A
80
60
40 TJ = 125°C
20
0 TJ = 25°C
4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
12.0
10.0 ID= 4.9A VDS= 80V
8.0
VDS= 50V
VDS= 20V
6.0
4.0
2.0
0.0
0
5 10 15 20 25
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs.
Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 3.2mH, RG = 25, IAS = 4.9A.
1
08/05/05


IRF6662 Datasheet
Recommendation IRF6662 Datasheet
Part IRF6662
Description DirectFet Power MOSFET
Feature IRF6662; www.DataSheet4U.com PD - 97039 IRF6662 DirectFET™ Power MOSFET Typical values (unless otherwise sp.
Manufacture International Rectifier
Datasheet
Download IRF6662 Datasheet




International Rectifier IRF6662
IRF6662
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
Drain-to-Source Breakdown Voltage
100
∆ΒVDSS/TJ
Breakdown Voltage Temp. Coefficient –––
RDS(on)
Static Drain-to-Source On-Resistance –––
VGS(th)
Gate Threshold Voltage
3.0
VGS(th)/TJ
Gate Threshold Voltage Coefficient
–––
IDSS
Drain-to-Source Leakage Current
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
11
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
0.10
17.5
–––
-9.7
–––
–––
–––
–––
–––
22
4.9
1.2
6.8
9.1
8.0
11
1.2
11
7.5
24
5.9
1360
270
61
1340
160
Typ.
–––
–––
–––
34
50
Max.
–––
–––
22
4.9
–––
20
250
100
-100
–––
31
–––
–––
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 8.2A
V VDS = VGS, ID = 100µA
mV/°C
µA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 4.9A
VDS = 50V
nC VGS = 10V
ID = 4.9A
See Fig. 17
nC VDS = 16V, VGS = 0V
VDD = 50V, VGS = 10V
ID = 4.9A
ns RG=6.2
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 80V, f=1.0MHz
Max.
2.5
66
1.3
51
75
Units
Conditions
MOSFET symbol
D
A showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = 4.9A, VGS = 0V
ns TJ = 25°C, IF = 4.9A, VDD = 50V
nC di/dt = 100A/µs
Notes:
Pulse width 400µs; duty cycle 2%.
Repetitive rating; pulse width limited by max. junction temperature.
2
www.irf.com



International Rectifier IRF6662
Absolute Maximum Ratings
Parameter
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
IRF6662
Max.
2.8
1.8
89
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
W
°C
Units
°C/W
100
D = 0.50
10
1
0.1
0.01
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R 1R 1
CiC= iτiRi/iRi
R 2R 2
τ2 τ2
R 3R 3
τ3 τ3
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
R 4R4
τAτA
Ri (°C/W)
1.2801
8.7256
τi (sec)
0.000322
0.164798
τ4 τ4 21.7500 2.2576
13.2511 69
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple incontact with top (Drain) of part.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
Rθ is measured at TJ of approximately 90°C.
back and with small clip heatsink.
Surface mounted on 1 in. square Cu
board (still air).
www.irf.com
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3





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