C3507 Datasheet (PDF)





C3507 Datasheet - 2SC3507

C3507   C3507  

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Power Transistors 2SC3507 Silicon NPN t riple diffusion planar type For high br eakdown voltage high-speed switching 15 .0±0.3 (0.7) Unit: mm 5.0±0.2 (3.2) 11.0±0.2 ■ Features • High-speed switching • High collector-base volta ge (Emitter open) VCBO • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which c an be installed to the heat sink with one

C3507 Datasheet - 2SC3507

C3507   C3507  
screw www.DataSheet4U.com ■ Absolute 21.0±0.5 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 Maximum Ratings TC = 25°C S ymbol VCBO VCES VCEO VEBO IC IB ICP PC Tj Tstg Ta = 25°C Rating 1 000 1 000 8 00 7 5 3 10 80 3.0 150 −55 to +150 ° C °C Unit V V V V A A A W Parameter C ollector-base voltage (Emitter open) Co llector-emitter voltage (E-B short) Collecto








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