2SC3507. C3507 Datasheet

C3507 2SC3507. Datasheet pdf. Equivalent


Part C3507
Description 2SC3507
Feature Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-.
Manufacture Panasonic
Datasheet
Download C3507 Datasheet


Power Transistors 2SC3507 Silicon NPN triple diffusion plan C3507 Datasheet
Recommendation Recommendation Datasheet C3507 Datasheet




C3507
Power Transistors
2SC3507
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Features
High-speed switching
High collector-base voltage (Emitter open) VCBO
Satisfactory linearity of forward current transfer ratio hFE
Full-pack package which can be installed to the heat sink with one
screw
www.DataSheetA4Ub.scomlute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Base current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCES
VCEO
VEBO
IC
IB
ICP
PC
Tj
Tstg
1 000
1 000
800
7
5
3
10
80
3.0
150
55 to +150
Unit
V
V
V
V
A
A
A
W
°C
°C
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter sustaining voltage * VCEO(SUS) IC = 0.5 A, L = 50 mH
Collector-base cutoff current (Emitter open) ICBO VCB = 1 000 V, IE = 0
Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0
Forward current transfer ratio
hFE VCE = 5 V, IC = 3 A
Collector-emitter saturation voltage
VCE(sat) IC = 3 A, IB = 0.6 A
Base-emitter saturation voltage
VBE(sat) IC = 3 A, IB = 0.6 A
Transition frequency
fT VCE = 5 V, IC = 0.5 A, f = 1 MHz
Turn-on time
ton IC = 3 A
Storage time
tstg IB1 = 0.6 A, IB2 = −1.2 A
Fall time
tf VCC = 250 V
800 V
50 µA
50 µA
6
1.5 V
1.5 V
6 MHz
1.0 µs
2.5 µs
0.5 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: VCEO(SUS) test circuit 50 Hz/60 Hz
mercury relay
X
L
120
6V
Y
1
15 V
G
Publication date: February 2003
SJD00106BED
1



C3507
2SC3507
100
(1)
80
60
PC Ta
(1)TC=Ta
(2)With a 100×100×2mm
Al heat sink
(3)Without heat sink
(PC=3W)
40
20 (2)
(3)
0
0 25 50 75 100 125 150
www.DataSheet4U.coAmmbient temperature Ta (°C)
IC VCE
10
TC=25˚C
8
6 IB=800mA
500mA
4 400mA
300mA
200mA
2 100mA
20mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
100
IC/IB=5
10
TC=100˚C
1
25˚C
–25˚C
0.1
0.01
0.01
0.1 1
Collector current IC (A)
10
VBE(sat) IC
100
IC/IB=5
10
1 TC=–25˚C
25˚C
100˚C
0.1
1 000
hFE IC
VCE=5V
100
TC=100˚C
10 –25˚C
25˚C
1
1 000
100
10
1
fT IC
VCE=5V
f=1MHz
TC=25˚C
0.01
0.01
0.1 1
Collector current IC (A)
10
0.1
0.01
0.1 1
Collector current IC (A)
10
0.1
0.01
0.1 1
Collector current IC (A)
10
ton , tstg , tf IC
10
tstg
1
ton
0.1
0.01
0
tf
Pulsed tw=1ms
Duty cycle=1%
IC/IB=5
(2IB1=–IB2)
VCC=250V
TC=25˚C
1234567
Collector current IC (A)
8
Safe operation area
100
Non repetitive pulse
TC=25˚C
10 ICP
IC
t=10ms
1
DC
t=1ms
0.1
0.01
1
10 100 1 000
Collector-emitter voltage VCE (V)
2 SJD00106BED







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