AO4444 N-Channel Enhancement Mode Field Effect Transistor
General Description
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Features
VDS (V) = 30V ID = 20A (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V)
The AO4444 uses advanced trench technology to excellent RDS(ON), body diode characteristics and ultra-low gate resistance. This device is ideally suite...
