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NPN Transistor. 2SD2111 Datasheet

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NPN Transistor. 2SD2111 Datasheet






2SD2111 Transistor. Datasheet pdf. Equivalent




2SD2111 Transistor. Datasheet pdf. Equivalent





Part

2SD2111

Description

Silicon NPN Transistor



Feature


www.DataSheet4U.com 2SD2111 Silicon NPN Triple Diffused Application Low frequ ency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter I D 3.0 kΩ (Typ) 400 Ω (Typ) 3 12 3 www.DataSheet4U.com 2SD2111 Absolute Maximum Ratings (Ta = 25°C) Item Colle ctor to base voltage Collector to emitt er voltage Emitter to base voltage Coll ector current Collector.
Manufacture

Hitachi Semiconductor

Datasheet
Download 2SD2111 Datasheet


Hitachi Semiconductor 2SD2111

2SD2111; peak current Collector power dissipatio n Symbol VCBO VCEO VEBO IC IC(peak) PC PC* Junction temperature Storage temper ature C to E diode forward current Note : 1. Value at TC = 25°C. Tj Tstg ID * 1 1 Rating 120 120 7 3 6 2 25 150 –5 5 to +150 3 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25 C) Item Collector to base breakdown vo ltage Symbol V(BR)CBO Mi.


Hitachi Semiconductor 2SD2111

n 120 120 7 — — 1000 — — — — — Typ — — — — — — — — — — Max — — — 10 10 200 00 1.5 3.0 2.0 3.5 3.0 V V V Unit V V V µA Test conditions IC = 0.1 mA, IE = 0 IC = 25 mA, RBE = ∞ IE = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RB E = ∞ VCE = 3 V, IC = 1.5 A* IC = 3 A , IB = 30 mA* IC = 3 A, IB = 30 mA* ID = 3 A* 1 1 Collector to emitter breakdown V(BR)CEO voltage Emitt.


Hitachi Semiconductor 2SD2111

er to base breakdown voltage Collector c utoff current V(BR)EBO ICBO ICEO DC cur rent transfer ratio Collector to emitte r saturation voltage Base to emitter sa turation voltage C to E diode forward v oltage Note: 1. Pulse test. hFE VCE(sat )1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD IC = 1.5 A, IB = 3 mA* 1 1 IC = 1.5 A, IB = 3 mA* 1 1 See switching characte ristic curve of 2S.

Part

2SD2111

Description

Silicon NPN Transistor



Feature


www.DataSheet4U.com 2SD2111 Silicon NPN Triple Diffused Application Low frequ ency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter I D 3.0 kΩ (Typ) 400 Ω (Typ) 3 12 3 www.DataSheet4U.com 2SD2111 Absolute Maximum Ratings (Ta = 25°C) Item Colle ctor to base voltage Collector to emitt er voltage Emitter to base voltage Coll ector current Collector.
Manufacture

Hitachi Semiconductor

Datasheet
Download 2SD2111 Datasheet




 2SD2111
www.DataSheet4U.com
2SD2111
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
123
1. Base
2. Collector
3. Emitter
2
1
3.0 k
(Typ)
400
(Typ)
3
ID




 2SD2111
www.DataSheet4U.com
2SD2111
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC(peak)
PC
PC*1
Tj
Tstg
ID*1
Rating
120
120
7
3
6
2
25
150
–55 to +150
3
Unit
V
V
V
A
A
W
°C
°C
A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V(BR)CBO
voltage
120
Collector to emitter breakdown V(BR)CEO
voltage
120
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage
Note: 1. Pulse test.
ICBO
ICEO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VD
1000
Typ
Max
Unit
V
Test conditions
IC = 0.1 mA, IE = 0
—V
IC = 25 mA, RBE =
—V
IE = 50 mA, IC = 0
10 µA
10
20000
1.5 V
3.0
2.0 V
3.5
3.0 V
VCB = 100 V, IE = 0
VCE = 100 V, RBE =
VCE = 3 V, IC = 1.5 A*1
IC = 1.5 A, IB = 3 mA*1
IC = 3 A, IB = 30 mA*1
IC = 1.5 A, IB = 3 mA*1
IC = 3 A, IB = 30 mA*1
ID = 3 A*1
See switching characteristic curve of 2SD1605.
2




 2SD2111
www.DataSheet4U.com
Maximum Collector Dissipation Curve
30
20
10
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
10
iC (peak)
3 IC (max)
1.0
0.3
Ta = 25°C
0.1 1 Shot Pulse
0.03
0.01
0.3 1.0 3
10 30 100 300
Collector to emitter voltage VCE (V)
Typical Output Characteristics
5 TC = 25°C 5
4
4
2.5 2
1.5
1
3
3
0.5 mA
2
1
IB = 0
0 12345
Collector to emitter voltage VCE (V)
10,000
DC Current Transfer Ratio
vs. Collector Current
VCE = 3 V
5,000
2,000
1,000
T
=
C
75°C
25–°2C5°C
500
200
100
0.1
0.2 0.5 1.0 2
5
Collector current IC (A)
10
2SD2111
3



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