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WFN1N60

Silicon N-Channel MOSFET

Description

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFN1N60 Silicon N-Channel MOSFET Features � � � � � 1.3A,600V, RDS(on)(Max8.5Ω)@VGS=10V Ultra-low Gate charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description Th is Power MO SFET is produced using Winse mi’s advan ced p...

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