N-Channel MOSFET. AO4404 Datasheet

AO4404 MOSFET. Datasheet pdf. Equivalent


Part AO4404
Description N-Channel MOSFET
Feature AO4404 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4404 uses advan.
Manufacture Freescale
Datasheet
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AO4404
AO4404
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO4404 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and
operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in
PWM applications. The source leads are separated to allow a Kelvin connection to the source, which
may be used to bypass the source inductance.
Features
VDS (V) = 30V
ID = 8.5A
RDS(ON) < 24m(VGS = 10V)
RDS(ON) < 30m(VGS = 4.5V)
RDS(ON) < 48m(VGS = 2.5V)
D
SD
SD
SD
GD
SOIC-8
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage VDS 30
Gate-Source Voltage
VGS ±12
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
8.5
7.1
60
Power Dissipation
TA=25°C
TA=70°C
PD
3
2.1
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/6
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AO4404
AO4404
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=8.5A
Static Drain-Source On-Resistance
VGS=4.5V, ID=8.5A
VGS=2.5V, ID=5A
Forward Transconductance
VDS=5V, ID=5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=4.5V, VDS=15V, ID=8.5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=1.8,
RGEN=6
Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
Min
30
0.7
40
10
Typ
1
20.5
30
25
40
16
0.71
857
97
71
1.4
9.7
1.63
3.1
14
4
33
5
15
8.6
Max Units
V
1
5
µA
100 nA
1.4 V
A
24
36
m
30 m
48 m
S
1V
4.3 A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
2/6
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