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GT30J126

Silicon N-Channel IGBT

Description

GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) Low saturation voltage: VCE (sat) = 1.95 V...

Toshiba

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