HGTG12N60B3
Data Sheet August 2003
27A, 600V, UFS Series N-Channel IGBTs
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only m...
