2SC3504. C3504 Datasheet

C3504 2SC3504. Datasheet pdf. Equivalent


Part C3504
Description 2SC3504
Feature Ordering number:EN1438B NPN Epitaxial Planar Silicon Transistor 2SC3504 High-Definition CRT Displa.
Manufacture Sanyo Semicon Device
Datasheet
Download C3504 Datasheet


Ordering number:EN1438B NPN Epitaxial Planar Silicon Transi C3504 Datasheet
Recommendation Recommendation Datasheet C3504 Datasheet




C3504
Ordering number:EN1438B
Features
· High fT.
· Small reverse transfer capacitance.
NPN Epitaxial Planar Silicon Transistor
2SC3504
High-Definition CRT Display,
Video Output Applications
Package Dimensions
unit:mm
2006A
[2SC3504]
EIAJ : SC-51
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Pal rameter
CoVllector-to-Base Voltage
CoVllector-to-Emitter Voltage
EmV itter-to-Base Voltage
CoI llector Current
CoI llector Current (Pulse)
CoPllector Dissipation
Jjunction Temperature
Stgorage Temperature
Sysmbo
CBO
CEO
EBO
C
CP
C
T
Tst
Electrical Characteristics at Ta = 25˚C
Cosndition
Parameter
Symbol
Conditions
CoI llector Cutoff Current
CBO VCB=40V, IE=10
EmI itter Cutoff Current
DC Current Gain
EBO
hFE
VEB=3V, IC=0
VCE=10V, IC=10mA
Gfain-Bandwidth Product
T VCE=10V, IC=10mA
Bar se-to-Collector Time Constant
bb'Cc VCE=10V, IC=10mA
Reverse Transfer Capacitance
CoVllector-to-Emitter Saturation Voltage
CrV CB=100V, f=1MHz
CE(sat) IC=20mA, IB=2mA
BaVse-to-Emitter Saturation Voltage
BE(sat) IC=20mA, IB=20mA
* : The 2SC3504 is classified by 10mA hFE as follows : 60 D 120 100 E 200 160 F 320
B : Base
C : Collector
E : Emitter
SANYO : MP
Rtating
Uni
7V0
6V0
4V
5A0 m
10A0 m
90W0 m
150 ˚C
–55 to +150 ˚C
Ratings
mipn txy
ma
0A.
1A.
60* * 320
300 5z0
80 2s
16. 1F.
0V.5
1V.
Unit
µ
µ
MH
p
p
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2098HA (KT)/4237AT/3205KI, TS No.1438–1/3
http://www.Datasheet4U.com



C3504
Parameter
CVollector-to-Base Breakdown Voltage
CoVllector-to-Emitter Breakdown Voltage
EVmitter-to-Base Breakdown Voltage
2SC3504
Symbol
Conditions
(BR)CBO
(BR)CEO
(BR)EBO
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=40
Ratings
mpin txy
7V
6V0
ma
Unit
V
No.1438–2/3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)