ME60N03
30V N-Channel Enhancement Mode MOSFET
VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5mΩ RDS(ON), Vgs@4.5V,Ids@20A =13mΩ
FEATURES
Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current
PIN
CONFIGURATION
(TO-252) Top V...
