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Mode MOSFET. ME60N03 Datasheet

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Mode MOSFET. ME60N03 Datasheet






ME60N03 MOSFET. Datasheet pdf. Equivalent




ME60N03 MOSFET. Datasheet pdf. Equivalent





Part

ME60N03

Description

30V N-Channel Enhancement Mode MOSFET



Feature


ME60N03 30V N-Channel Enhancement Mode M OSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5mΩ RDS(ON), Vgs@4.5V,Ids@20A =13m Ω FEATURES Advanced trench process te chnology High density cell design for u ltra low on-resistance Specially design ed for DC/DC converters and motor drive rs Fully characterized avalanche voltag e and current PIN CONFIGURATION (TO- 252) Top View Absol.
Manufacture

Matsuki

Datasheet
Download ME60N03 Datasheet


Matsuki ME60N03

ME60N03; ute Maximum Ratings (TA=25℃ Unless Oth erwise Noted) Parameter Drain-Source Vo ltage Gate-Source Voltage Continuous Dr ain Current Pulsed Drain Current Maximu m Power Dissipation TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM PD TJ, Tstg EAS RθJA RθJC Limit 30 ±20 50 100 50 2 3 -55 to 150 110 T≦10 sec Steady Stat e 20 15 40 Unit V V A A W ℃ mJ ℃/W ℃/W Operating Junction and Stor.


Matsuki ME60N03

age Temperature Range Avalanche Energy w ith Single Pulse(L=0.5mH,Rg=25Ω) Therm al Resistance-Junction to Ambient* Ther mal Resistance-Junction to Case *The de vice mounted on 1in2 FR4 board with 2 o z copper Apr, 2007 – Version 4.1 01 ME60N03 30V N-Channel Enhancement Mod e MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Sym bol STATIC BVDSS VGS(th.


Matsuki ME60N03

) IGSS IDSS RDS(ON) DYNAMIC Qg Qgs Qgd C iss Coss Crss Rg Total Gate Charge Gate -Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Tu rn-On Delay Time Turn-On Rise Time Turn -Off Delay Time Turn-Off Fall Time RL=1 5Ω, VGEN =10V, ID=1A VDD=15V, RG=24Ω VDS=15V, VGS=0V, f=1MHz VDS=0V, VGS=0V, f=1MHz VDS=15V, VGS.

Part

ME60N03

Description

30V N-Channel Enhancement Mode MOSFET



Feature


ME60N03 30V N-Channel Enhancement Mode M OSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5mΩ RDS(ON), Vgs@4.5V,Ids@20A =13m Ω FEATURES Advanced trench process te chnology High density cell design for u ltra low on-resistance Specially design ed for DC/DC converters and motor drive rs Fully characterized avalanche voltag e and current PIN CONFIGURATION (TO- 252) Top View Absol.
Manufacture

Matsuki

Datasheet
Download ME60N03 Datasheet




 ME60N03
30V N-Channel Enhancement Mode MOSFET
VDS=30V
RDS(ON), Vgs@10V,Ids@30A = 8.5mΩ
RDS(ON), Vgs@4.5V,Ids@20A =13mΩ
FEATURES
Advanced trench process technology
High density cell design for ultra low on-resistance
Specially designed for DC/DC converters and motor drivers
Fully characterized avalanche voltage and current
PIN CONFIGURATION
(TO-252)
Top View
ME60N03
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse(L=0.5mH,Rg=25Ω)
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
PD
TJ, Tstg
EAS
RθJA
RθJC
Limit
30
±20
50
100
50
23
-55 to 150
110
T≦10 sec
Steady State
20
15
40
Unit
V
V
A
A
W
mJ
℃/W
℃/W
Apr, 2007 – Version 4.1
01




 ME60N03
30V N-Channel Enhancement Mode MOSFET
Electrical Characteristics (TA =25Unless Otherwise Specified)
ME60N03
Symbol
STATIC
BVDSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-Resistance
DYNAMIC
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg
td(on)
tr
td(off)
tf
Gate Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
SOURCE-DRAIN DIODE
IS Max.Diode Forward Current
VSD Diode Forward Voltage
Note: Pulse test: pulse width=300us, duty cycle=2
Limit
Min Typ Max Unit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=24V, VGS=0V
VGS=10V, ID=30A
VGS=4.5V, ID=20A
30 V
1 1.6
3
V
±100 nA
1 μA
6.5 8.5
mΩ
10 13
VDS=15V, VGS=10V, ID=35A
VDS=15V, VGS=0V,
f=1MHz
VDS=0V, VGS=0V, f=1MHz
RL=15Ω, VGEN =10V, ID=1A
VDD=15V, RG=24Ω
22
4.5
4
1100
240
90
2.5
13
10
46
7
25
1300
17
13
58
10
nC
pF
Ω
ns
IS=20A, VGS=0V
0.87
20
1.5
A
V
Apr, 2007 – Version 4.1
02




 ME60N03
30V N-Channel Enhancement Mode MOSFET
Typical Characteristics (TJ =25Noted)
ME60N03
Apr, 2007 – Version 4.1
03



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